| PART |
Description |
Maker |
| MMFT2955E MMFT2955E-D MMFT2955ET1 MMFT2955ET1G MMF |
Power MOSFET 1 Amp, 60 Volts P-Channel(1A锛?0V锛?娌??澧?己?????OS?烘?搴??)
Power MOSFET 1 Amp, 60 Volts P-Channel(1A60V，P沟道增强型功率MOS场效应管)
Power MOSFET 1 Amp, 60 Volts P-Channel SOT-223
|
ON Semiconductor
|
| HIP1012ACBZA-T |
Dual Power Distribution Controller; Temperature Range: 0°C to 70°C; Package: 14-SOIC T&R 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO14
|
Intersil, Corp.
|
| ISL6622AIBZ ISL6622AIRZ ISL6622ACRZ ISL6622ACBZ IS |
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 10-DFN T&R 3 A AND GATE BASED MOSFET DRIVER, PDSO10
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R 3 A AND GATE BASED MOSFET DRIVER, PDSO8
|
Intersil Corporation
Intersil, Corp.
|
| EDI8F32259C35MNC EDI8F32259C35MMC EDI8G32259B12MZC |
High Speed, Single Channel, Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-PDIP
x32 SRAM Module
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R X32号的SRAM模块
|
Integrated Device Technology, Inc.
Samsung Semiconductor Co., Ltd.
|
| EDI8F32259C EDI8F32259C-MM EDI8F32259C-MN EDI8G322 |
256Kx32 Static RAM CMOS, High Speed Module(256Kx8 CMOS高速静态RAM模块)
High Speed, Single Channel, Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R SRAM模块
|
White Electronic Designs Corporation
|
| NTD4805N-35G NTD4805N-1G NTD4805NT4G |
Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK 12.6 A, 30 V, 0.0074 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| APT77N60JC3 |
Power MOSFET; Package: ISOTOP®; ID (A): 77; RDS(on) (Ohms): 0.035; BVDSS (V): 600;
Super Junction MOSFET
|
MICROSEMI[Microsemi Corporation]
|
| IRFS644BFP001 |
250V N-Channel B-FET / Substitute of IRFS644 & IRFS644A; ; No of Pins: 3; Container: Rail 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| EDI7F2331MV100BNC EDI7F2331MV150BNC |
Dual 3MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output; Temperature Range: -55°C to 125°C; Package: 8-SOIC T&R EEPROM
|
Bourns, Inc.
|
| NTF3055L108 NTF3055L108D NTF3055L108T1 NTF3055L108 |
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 3 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V逻辑电平,N通道，SOT-223封装的功率MOSFET)
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
|
ONSEMI[ON Semiconductor]
|
| HUF75343S3 HUF75343S3S HUF75343G3 HUF75343P3 HUF75 |
75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQD18N20V2TM FQD18N20V2TF |
200V N-Channel Advanced QFET V2 series; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 15 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
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